Features: • High-speed access times: 8, 10, 12 and 15 ns• High-performance, low-power CMOS process• Multiple center power and ground pins for greater noise immunity• Easy memory expansion withCE andOE options•CE power-down• Fully static operation: no clock or re...
IS63LV1024: Features: • High-speed access times: 8, 10, 12 and 15 ns• High-performance, low-power CMOS process• Multiple center power and ground pins for greater noise immunity• Easy mem...
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Symbol | Parameter | Value | Unit |
VTERM | Terminal Voltage with Respect to GND | 0.5 to Vcc + 0.5 | V |
TBIAS | Temperature Under Bias | 55 to +125 | °C |
TSTG | Storage Temperature | 65 to +150 | °C |
PT | Power Dissipation | 1.0 | W |
Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The ISSI IS63LV1024 is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary
pinout. The IS63LV1024 is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) with CMOS input levels.
The IS63LV1024 operates from a single 3.3V power supply and all inputs are TTL-compatible.