PinoutSpecificationsDescriptionThe IS63LV1024L-8TL is one member of the IS63LV1024 family which is designed as the 128K x 8 high-speed CMOS static RAM device that is fabricated using ISSI's high-performance CMOS technology. And this device operates from a single 3.3V power supply and all inputs ar...
IS63LV1024L-8TL: PinoutSpecificationsDescriptionThe IS63LV1024L-8TL is one member of the IS63LV1024 family which is designed as the 128K x 8 high-speed CMOS static RAM device that is fabricated using ISSI's high-per...
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Features: • High-speed access times: 8, 10, 12 and 15 ns• High-performance, low-power ...
The IS63LV1024L-8TL is one member of the IS63LV1024 family which is designed as the 128K x 8 high-speed CMOS static RAM device that is fabricated using ISSI's high-performance CMOS technology. And this device operates from a single 3.3V power supply and all inputs are TTL-compatible.
Features of the IS63LV1024L-8TL are:(1)High-speed access times: 8, 10, 12 ns; (2)High-performance, low-power CMOS process; (3)Multiple center power and ground pins for greater noise immunity; (4)Easy memory expansion with CE and OE options; (5)CE power-down; (6)Fully static operation: no clock or refresh required; (7)TTL compatible inputs and outputs; (8)Single 3.3V power supply.
The absolute maximum ratings of the IS63LV1024L-8TL can be summarized as:(1)Terminal Voltage with Respect to GND: -0.5 to Vcc+0.5 V;(2)Temperature Under Bias: -55 to +125 °C;(3)Storage Temperature: -65 to +150 °C;(4)Power Dissipation: 1.0 W.
The electrical characteristics of this IS63LV1024L-8TL can be summarized as:(1)Output HIGH Voltage: 2.4 V;(2)Output LOW Voltage: 0.4 V;(3)Input HIGH Voltage: 2.2 to VCC+0.3 V;(4)Input LOW Voltage: -0.3 to 0.8 V;(5)Input Leakage: -1 to +1 uA;(6)Output Leakage: -1 to +1 uA. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com.