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IS45S81600B

Features: • Clock frequency: 143, 100 MHz• Fully synchronous; all signals referenced to a positive clock edge• Internal bank for hiding row access/precharge• Power supply VDD V DDQ IS45S81600B 3.3V 3.3V IS45S16800B 3.3V 3.3V• LVTTL interface• Programmable burst ...

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SeekIC No. : 004379080 Detail

IS45S81600B: Features: • Clock frequency: 143, 100 MHz• Fully synchronous; all signals referenced to a positive clock edge• Internal bank for hiding row access/precharge• Power supply VDD...

IS45S81600B Data Sheet

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Part Number:
IS45S81600B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Clock frequency: 143, 100 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Power supply VDD V DDQ IS45S81600B 3.3V 3.3V IS45S16800B 3.3V 3.3V
• LVTTL interface
• Programmable burst length
(1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh with programmable refresh periods
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Automotive Temperature Range Option A: 0oC to +70oC Option A1: -40oC to +85oC
• Lead-free Availability


Pinout

Connection Diagram


Specifications

Symbol
Parameters
Rating
Unit
V DD MAX
V DDQ
M AX
VIN
VOUT
P D MAX
ICS
TOPR
TSTG
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature A A1
Storage Temperature
1.0 to +4.6
1.0 to +4.6
1.0 to +4.6
1.0 to +4.6
1
50
0 to +70
-40 to +85
55 to +150
V
V
V
V
W
mA
°C
°C
°C

Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. All voltages are referenced to Vss.




Description

ISSI's 128Mb Synchronous DRAM IS45S81600B achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM IS45S81600B is organized as follows.




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