Features: • Extended Data-Out (EDO) Page Mode access cycle• TTL compatible inputs and outputs• Refresh Interval: 2,048 cycles/32 ms• Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden• Single power supply: 3.3V ± 10%• Byte Write and Byte Read operation vi...
IS45LV44002B: Features: • Extended Data-Out (EDO) Page Mode access cycle• TTL compatible inputs and outputs• Refresh Interval: 2,048 cycles/32 ms• Refresh Mode: RAS-Only, CAS-before-RAS (...
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Symbol | Parameters |
Rating |
Unit |
VT | Voltage on Any Pin Relative to GND |
0.5 to +4.6 |
V |
VDD | Supply Voltage |
0.5 to +4.6 |
V |
IOUT | Output Current |
50 |
mA |
PD | Power Dissipation |
1 |
W |
TA | Operating Temperature |
-40 to +85 |
|
TSTG | Storage Temperature |
55 to +125 |
The ISSI IS45LV44002B is 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.
These features make the IS45LV44002B ideally suited for high-bandwidth graphics, digital signal processing, highperformance computing systems, and peripheral applications.
The IS45LV44002B is packaged in a 24-pin 300-mil SOJ with JEDEC standard pinouts.