Features: • Clock frequency: 100, 83, 66 MHz• Fully synchronous; all signals referenced to a positive clock edge• Internal bank for hiding row access/precharge• Single 1.8V power supply• LVTTL interface• Programmable burst length (1, 2, 4, 8, full page)• P...
IS42VS16400C1: Features: • Clock frequency: 100, 83, 66 MHz• Fully synchronous; all signals referenced to a positive clock edge• Internal bank for hiding row access/precharge• Single 1.8V p...
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Features: • 256,144 words x 32 bits x 2-bank organization• All inputs are sampled at t...
Symbol | Parameter | Value | Unit |
VDD MAX VDDQ MAX VIN |
Maximum Supply Voltage Maximum Supply Voltage for Output Buffer Input Voltage |
0.5 to +2.6 0.5 to +2.6 0.5 to +2.6 |
V V V |
PD MAX ICS |
Allowable Power Dissipation Output Shorted Current |
1 50 |
W mA |
TOPR | Operating Temperature Com Ind. |
0 to +70 -40 to +85 |
|
TSTG | Storage Temperature | 55 to +150 |
ISSI's 64Mb Synchronous DRAM IS42VS16400C1 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.