Features: • Clock frequency: 100 MHz• Fully synchronous; all signals referenced to apositive clock edge• Two banks can be operated simultaneously andindependently• Dual internal bank controlled by A11(bank select)• Single 1.8V power supply• LVTTL interface•...
IS42VS16100C1: Features: • Clock frequency: 100 MHz• Fully synchronous; all signals referenced to apositive clock edge• Two banks can be operated simultaneously andindependently• Dual inter...
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Features: • 256,144 words x 32 bits x 2-bank organization• All inputs are sampled at t...
Symbol | Parameters | Rating | Unit | |
VCC MAX | Maximum Supply Voltage | 0.5 to +2.6 | V | |
VCCQ MAX | Maximum Supply Voltage for Output Buffer | 0.5 to +2.6 | V | |
VIN | Input Voltage | 0.5 to +2.6 | V | |
PD MAX | Allowable Power Dissipation | 1 | W | |
ICS | Output Shorted Current | 50 | mA | |
TOPR | Operating Temperature | Com Ind. |
0 to +70 -40 to +85 |
|
TSTG | Storage Temperature | 55 to +150 |
ISSI's 16Mb Synchronous DRAM IS42VS16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.