Features: • Clock frequency: 166, 143 MHz• Fully synchronous; all signals referenced to a positive clock edge• Internal bank for hiding row access/precharge• Power supply VDD VDDQ IS42S83200B 3.3V 3.3V IS42S16160B 3.3V 3.3V• LVTTL interface• Programmable burst l...
IS42S83200B: Features: • Clock frequency: 166, 143 MHz• Fully synchronous; all signals referenced to a positive clock edge• Internal bank for hiding row access/precharge• Power supply VDD...
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Features: • 256,144 words x 32 bits x 2-bank organization• All inputs are sampled at t...
Symbol | Parameters | Rating | Unit |
VDD MAX | Maximum Supply Voltage | 0.5 to +4.6 | V |
VDDQ MAX | Maximum Supply Voltage for Output Buffer | 0.5 to +4.6 | V |
VIN | Input Voltage | 0.5 to VDD + 0.5 | V |
VOUT | Output Voltage | 1.0 to VDDQ + 0.5 | V |
PD MAX | Allowable Power Dissipation | 1 | W |
ICS | Output Shorted Current | 50 | mA |
TOPR | Operating Temperature Com. Ind. |
0 to +70 40 to +85 |
|
TSTG | Storage Temperature | 65 to +150 |
ISSI's 256Mb Synchronous DRAM IS42S83200B achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM IS42S83200B is organized as follows.