IS42S3800D-6TL

The IS42S3800D-6TL is designed as one kind of 4M words x 32 bits x 4 banks (512-mbit) synchronous dynamic RAM device that ism organized as 8192 rows by 512 columns by 32 bits. And this device provides for programmable Read or Write burst lengths of 1,2,4,8,or full page, with a burst termination operation.

Features of the IS42S3800D-6TL are:(1)Concurrent auto precharge; (2)Clock rate: 133 MHz; (3)Fully synchronous operation; (4)Internal pipelined architecture; (5)Four internal banks (4M x 32bit x 4bank); (6)Burst stop function; (7)Individual byte controlled by DQM0-3; (8)Auto Refresh and Self Refresh; (9)8K refresh cycles/64ms; (10)8K refresh cycles/32ms for Industrial grade; (11)Single +3.3V ±0.3V power supply; (12)Interface:LVTTL; (13)Package: 8x13mm, 90 Ball LF-BGA, Ball pitch 0.8mm, Ball size 0.45mm; (14)Pb-free package is available; (15)Available in Industrial Temperature.

The absolute maximum ratings of the IS42S3800D-6TL can be summarized as:(1)Supply Voltage (with respect to VSS):0.5 to +4.6 V;(2)Supply Voltage for Output (with respect to VSSQ):0.5 to +4.6 V;(3)Input Voltage (with respect to VSS):0.5 to VDD+0.5 V;(4)Output Voltage (with respect to VSSQ):1.0 to VDDQ+0.5 V;(5)Short circuit output current: 50 mA;(6)Power Dissipation (TA = 25 °C): 1 W;(7)Storage Temperature:55 to +150 °C. If you want to know more information such as the electrical characteristics about the IS42S3800D-6TL, please download the datasheet in www.seekic.com or www.chinaicmart.com.