IS42S32400B

The READ command IS42S32400B  selects the bank from BA0, BA1 inputs and starts a burst read access to an active row.Inputs A0-A7 provides the starting column location. When A10 is HIGH, this command functions as an AUTO PRECHARGE command. When the auto precharge is selected, the row being accessed will be precharged at the end of the READ burst. The row will remain open for subsequent accesses when AUTO PRECHARGE is not selected. DQ's read data is subject to the logic level on the DQM inputs two clocks earlier. When a given DQM signal was registered HIGH, the corresponding DQ's will be High-Z two clocks later. DQ's will provide valid data when the DQM signal was registered LOW.

A burst write access to an active row is initiated with the WRITE command. BA0, BA1 inputs selects the bank, and the starting column location is provided by inputs A0-A7.Whether or not AUTO-PRECHARGE is used is determined by A10.

The row being accessed will be precharged at the end of the WRITE burst, if AUTO PRECHARGE is selected. If AUTO PRECHARGE is not selected, the row will remain open for subsequent accesses.

A memory array is written with corresponding input data on DQ's and DQM input logic level appearing at the same time.Data will be written to memory when DQM signal is LOW. When DQM is HIGH, the corresponding data inputs will be ignored, and a WRITE will not be executed to that byte/column location.