IS42S32200E-6TL

DRAM 64M 2Mx32 166Mhz SDRAM, 3.3v

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SeekIC No. : 00452310 Detail

IS42S32200E-6TL: DRAM 64M 2Mx32 166Mhz SDRAM, 3.3v

floor Price/Ceiling Price

US $ 1.72~2.06 / Piece | Get Latest Price
Part Number:
IS42S32200E-6TL
Mfg:
ISSI
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $2.06
  • $1.95
  • $1.79
  • $1.72
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Data Bus Width : 32 bit Package / Case : TSOP-86
Memory Size : 64 Mbit Maximum Clock Frequency : 166 MHz
Access Time : 8 ns, 5.5 ns Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 3 V Maximum Operating Current : 160 mA
Maximum Operating Temperature : + 70 C Packaging : Tube    

Description

Organization :
Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 3 V
Packaging : Tube
Maximum Clock Frequency : 166 MHz
Maximum Operating Temperature : + 70 C
Data Bus Width : 32 bit
Package / Case : TSOP-86
Memory Size : 64 Mbit
Access Time : 8 ns, 5.5 ns
Maximum Operating Current : 160 mA


Description

The IS42S32200E-6TL is designed as one kind of 512K bits x 32 bits x 4 banks (64-Mbit) synchronous dynamic RAM device that is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve highspeed data transfer using pipeline architecture.

Features of the IS42S32200E-6TL are:(1)Clock frequency: 200, 166, 143, 133 MHz; (2)Fully synchronous; all signals referenced to a positive clock edge; (3)Internal bank for hiding row access/precharge; (4)Single 3.3V power supply; (5)LVTTL interface; (6)Programmable burst length: (1, 2, 4, 8, full page); (7)Programmable burst sequence: Sequential/Interleave; (8)Self refresh modes; (9)4096 refresh cycles every 16ms (A2 grade) or 64ms (Commercia, Industrial, A1 grade); (10)Random column address every clock cycle; (11)Programmable CAS latency (2, 3 clocks); (12)Burst read/write and burst read/single write operations capability; (13)Burst termination by burst stop and precharge command.

The absolute maximum ratings of the IS42S32200E-6TL can be summarized as:The absolute maximum ratings of the can be summarized as:(1)Maximum Supply Voltage:1.0 to +4.6 V;(2)Maximum Supply Voltage for Output Buffer:1.0 to +4.6 V;(3)Input Voltage:1.0 to +4.6 V;(4)Output Voltage:1.0 to +4.6 V;(5)Allowable Power Dissipation: 1 W;(6)output Shorted Current: 50 mA;(7)Storage Temperature:55 to +150 °C. If you want to know more information such as the electrical characteristics about the IS42S32200E-6TL, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog InformationIS42S32200E-6TL
VendorISSI, Integrated Silicon Solution Inc
CategoryIntegrated Circuits (ICs)
Memory TypeSDRAM
Memory Size64M (2Mx32)
Speed166MHz
InterfaceParallel
Package / Case86-TSOPII
PackagingTray
Voltage - Supply3.15 V ~ 3.45 V
Operating Temperature0°C ~ 70°C
Format - MemoryRAM
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IS42S32200E 6TL
IS42S32200E6TL



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