IS42S16160C-7TL

The IS42S16160C-7TL is one member of the IS42S16160C family which is designed as the 256 Mb Single Data Rate Synchronous DRAM device that achieves very high speed data rates up to 166MHz, and are suitable for main memories or graphic memories in computer systems. All inputs and outputs of this device are referenced to the rising edge of CLK.

Features of the IS42S16160C-7TL are:(1)Fully synchronous operation referenced to clock rising edge; (2)4-bank operation controlled by BA0,BA1(Bank Address); (3)/CAS latency- 2/3 (programmable); (4)Burst length- 1/2/4/8/FP (programmable); (5)Burst type- Sequential and interleave burst (programmable); (6)Byte Control- LDQM and UDQM (IS42S16160C); (7)Random column access; (8)Auto precharge / All bank precharge controlled by A10; (9)Auto and self refresh; (10)8192 refresh cycles /64ms; (11)LVTTL Interface Package.

The absolute maximum ratings of the IS42S16160C-7TL can be summarized as:(1)Voltage on any pin relative to Vss: -0.5 to 4.6 V;(2)Voltage on VDD supply relative to Vss: -0.5 to 4.6 V;(3)Storage temperature: -65 to +150 ;(4)Power dissipation: 1.0 W;(5)Short circuit current: 50 mA.

The electrical characteristics of this device can be summarized as:(1)Supply voltage: 3.0 to 3.6 V;(2)Input logic high voltage: 2.0 to VDDQ + 0.3 V;(3)Input logic low voltage: -0.3 to 0.8 V;(4)Output logic high voltage: 2.4 V;(5)Output logic low voltage: 0.4 V;(6)Input leakage current: -5 to 5 uA;(7)Output leakage current: -5 to 5 uA. If you want to know more information such as the electrical characteristics about the IS42S16160C-7TL, please download the datasheet in www.seekic.com or www.chinaicmart.com.