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IS42S16160B

Features: • Clock frequency: 166, 143 MHz• Fully synchronous; all signals referenced to a positive clock edge• Internal bank for hiding row access/precharge• Power supply VDD VDDQ IS42S83200B 3.3V 3.3V IS42S16160B 3.3V 3.3V• LVTTL interface• Programmable burst l...

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SeekIC No. : 004379036 Detail

IS42S16160B: Features: • Clock frequency: 166, 143 MHz• Fully synchronous; all signals referenced to a positive clock edge• Internal bank for hiding row access/precharge• Power supply VDD...

IS42S16160B Data Sheet

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Part Number:
IS42S16160B
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Clock frequency: 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Power supply
                         VDD  VDDQ
   IS42S83200B 3.3V  3.3V
   IS42S16160B 3.3V  3.3V
• LVTTL interface
• Programmable burst length
   (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh
• 8K refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Available in Industrial Temperature
• Available in 54-pin TSOP-II and 54-ball BGA (x16 only)
• Available in Lead-free


Pinout

Connection Diagram


Specifications

Symbol Parameters Rating Unit
VDD MAX Maximum Supply Voltage 0.5 to +4.6 V
VDDQ MAX Maximum Supply Voltage for Output Buffer 0.5 to +4.6 V
VIN Input Voltage 0.5 to VDD + 0.5 V
VOUT Output Voltage 1.0 to VDDQ + 0.5 V
PD MAX Allowable Power Dissipation 1 W
ICS Output Shorted Current 50 mA
TOPR Operating Temperature Com.
                                        Ind.		 0 to +70
40 to +85
TSTG Storage Temperature 65 to +150

Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. All voltages are referenced to Vss.


Description

ISSI's 256Mb Synchronous DRAM IS42S16160B achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM IS42S16160B is organized as follows.




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