Features: • Clock frequency: 166, 143, 100 MHz• Fully synchronous; all signals referenced to a positive clock edge• Two banks can be operated simultaneously and independently• Dual internal bank controlled by A11 (bank select)• Single 3.3V power supply• LVTTL in...
IS42S16100A1: Features: • Clock frequency: 166, 143, 100 MHz• Fully synchronous; all signals referenced to a positive clock edge• Two banks can be operated simultaneously and independently•...
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Features: • 256,144 words x 32 bits x 2-bank organization• All inputs are sampled at t...
Symbol | Parameters | Rating | Unit |
VDD MAX | Maximum Supply Voltage | 1.0 to +4.6 | V |
VDDQ MAX | Maximum Supply Voltage for Output Buffer | 1.0 to +4.6 | V |
VIN | Input Voltage | 1.0 to +4.6 | V |
VOUT | Output Voltage | 1.0 to +4.6 | V |
PD MAX | Allowable Power Dissipation | 1 | W |
ICS | Output Shorted Current | 50 | mA |
TOPR | Operating Temperature | Com 0 to +70 Ind. -40 to +85 |
|
TSTG | Storage Temperature | 55 to +150 |
ISSI's 16Mb Synchronous DRAM IS42S16100A1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.