Features: · Total dose to 1.0 Mrad(Si) and low dose capability to 500 Krad(Si) allows use in space applications·Single Event latchup Immune LET = 84 MeV/(mg/cm2) Fluency = 1 x 109 Ions/cm2·Low noise, higher efficiency· Ultra low dropout voltage of 0.4V@ 3A outsignificantly reduces power consumpti...
IRUH50P253A1M: Features: · Total dose to 1.0 Mrad(Si) and low dose capability to 500 Krad(Si) allows use in space applications·Single Event latchup Immune LET = 84 MeV/(mg/cm2) Fluency = 1 x 109 Ions/cm2·Low nois...
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Features: Total dose to 1.0 Mrad (Si) and low dose capability to 500 krad (Si) allows use in spac...
Features: ·Total dose to 1.0Mrad(Si) and low dose capability to 500 Krad(Si) allows use in space a...
Parameter |
Symbol |
Value |
Units |
Output Current |
IO |
3.5 |
A |
Input Voltage |
VIN |
7.0 |
V |
Power Dissipation, TC = 25°C |
PTOT |
19 |
W |
Thermal Resistance, Junction to Case |
RTHJC |
6.5 |
°C/W |
Operating Temperature Range |
TJ |
-55 to +125 |
°C |
Storage Temperature Range |
TS |
-65 to +150 | |
Lead Temperature |
TL |
300 |
The IRUH50P253A1M is a space qualified, ultra low dropout linear regulator designed specifically for space applications. This product has been characterized to a total ionizing dose of 1.0 Mrad(Si) per MIL-STD-883, Method 1019 at both high and low dose rates under biased and unbiased conditions to account for ELDRS effects in bipolar devices. The ultra low dropout voltage of 0.4V@ 3A makes the part particularly useful for applications requiring low noise and higher efficiency.