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IRUH33P253A1M

Features: Total dose to 1.0 Mrad (Si) and low dose capability to 500 krad (Si) allows use in space applications Single Event latchup Immune LET= 84 MeV/(mg/cm2) Fluency = 1x109 ions/cm2 Low noise, higher efficiency Ultra low dropout voltage of 0.4V@ 3A out significantly reduces power consumption ...

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SeekIC No. : 004378854 Detail

IRUH33P253A1M: Features: Total dose to 1.0 Mrad (Si) and low dose capability to 500 krad (Si) allows use in space applications Single Event latchup Immune LET= 84 MeV/(mg/cm2) Fluency = 1x109 ions/cm2 Low noise, ...

IRUH33P253A1M Data Sheet

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Part Number:
IRUH33P253A1M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

Total dose to 1.0 Mrad (Si) and low dose capability to 500 krad (Si) allows use in space applications
Single Event latchup Immune LET= 84 MeV/(mg/cm2) Fluency = 1x109 ions/cm2
Low noise, higher efficiency
Ultra low dropout voltage of 0.4V@ 3A out significantly reduces power consumption
Remote shutdown permits power sequencing to be easily implemented
Hermetic 8-lead flat pack ensures higher reliability
Space Level Screened
 This part is also available in MO-078 Package as IRUH33P253B1M


Specifications

Parameter
Symbol
Value
Units
Output Current
IO
3.5
A
Input Voltage
Vin
7
V
Power Dissipation TC = 25°C
PTOT
19
W
Thermal Resistance, Junction to Case
RTHJC
6.5
/W
Operating Temperature Range
TJ
-55 to +125
Storage Temperature Range
TS
-65 to +150
Lead Temperature
TL
300



Description

The IRUH33P253A1M is a space qualified, ultra low dropout linear regulator designed specifically for space applications. This product has been characterized to a total ionizing dose of 1.0 Mrad (Si) per MIL-STD-883, Method 1019, Condition D at both high and low dose rates under biased and unbiased conditions to account for ELDRS effects in bipolar devices. The ultra low dropout voltage of 0.4V @ 3A makes the part particularly useful for applications requiring low noise and higher efficiency.




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