IRLZ44ZSPBF

MOSFET

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IRLZ44ZSPBF Picture
SeekIC No. : 00153294 Detail

IRLZ44ZSPBF: MOSFET

floor Price/Ceiling Price

US $ .62~1.36 / Piece | Get Latest Price
Part Number:
IRLZ44ZSPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.36
  • $.88
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  • $.62
  • Processing time
  • 15 Days
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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : 16 V Continuous Drain Current : 51 A
Resistance Drain-Source RDS (on) : 22.5 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Gate-Source Breakdown Voltage : 16 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 51 A
Resistance Drain-Source RDS (on) : 22.5 mOhms


Features:

Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175 Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
 Lead-Free



Specifications

  Parameter
Maximum
Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited)
51
A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V
36
IDM Pulsed Drain Current 􀀀
204
PD @TC= 25 Power Dissipation
80
W
  Linear Derating Factor
0.53
W/
VGS Gate-to-Source Voltage
± 16
V
EAS (Thermally limited) Single Pulse Avalanche Energy
78
mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value
110
IAR Avalanche Current􀀀
See Fig.12a, 12b, 15, 16
A
EAR Repetitive Avalanche Energy
mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting Torque, 6-32 or M3 screw
10 lbf`in (1.1N`m)



Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRLZ44ZSPbF utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of IRLZ44ZSPbF  are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Parameters:

Technical/Catalog InformationIRLZ44ZSPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C51A
Rds On (Max) @ Id, Vgs13.5 mOhm @ 31A, 10V
Input Capacitance (Ciss) @ Vds 1620pF @ 25V
Power - Max80W
PackagingBulk
Gate Charge (Qg) @ Vgs36nC @ 5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRLZ44ZSPBF
IRLZ44ZSPBF



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