IRLZ144NPbF

      The IRLIZ44NPbF is a kind of fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve extremely law on-resistance per silicon area. The benefit, combined Mth the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known far, provides the designer with an extremely efficient and reliable device for use in a Wide variety of applications.
      The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a law thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
      The features of IRLIZ44NPbF are Logic-Level Gate Drive , Advanced Process Technology, Isolated Package, High Voltage, Isolation = 2.5KVRMS, Sink to Lead Creepage Dist. = 4.8mm, Fully Avalanche Rated, Lead-Free
      The parameters of the IRLIZ44NPbF are VGS (Gate-to-Source Voltage)=±16V, ID @ TA = 25°C   (Continuous Drain Current, ID @ TA = 100°C (Continuous Drain Current, VGS @ 10V )=22A, PD @TC = 25°C(Power Dissipation )=45W,  IDM (Pulsed Drain Current)=160A, dv/dt (Peak Diode Recovery dv/dt )=5.0V/ns, EAS (Single Pulse Avalanche Energy)=210mJ, TJ (Operating Junction and)= -55  to + 175°C=TSTG( Storage Temperature Range Soldering Temperature, for 10 seconds ), RJC( Junction-to-Case )=3.3°C/W, RJA( Junction-to-Ambient )=65°C/W.