IRLZ14L

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 10 A
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 10 V
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 0.2 Ohms


Features:

· Advanced Process Technology
· Surface Mount (IRLZ14S)
· Low-profile through-hole (IRLZ14L)
· 175°C Operating Temperature
· Fast Switching


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	10	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	7.2	A
IDM	Pulsed Drain Current	40	A
PD @TA = 25°C	Power Dissipation	3.7	A
PD @TC = 25°C	Power Dissipation	43	W
	Linear Derating Factor	0.29	W/°C
VGS	Gate-to-Source Voltage	±10	V
EAS	Single Pulse Avalanche Energy	68	mJ
dv/dt	Peak Diode Recovery dv/dt	4.5	V/ns
TJ,TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)	°C

Description

Third Generation HEXFETs from International Rectifier IRLZ14L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLZ14L design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRLZ14L is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRLZ14L  provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRLZ14L  is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRLZ14L) is available for lowprofile applications.