IRLZ44ZPBF

MOSFET MOSFT 55V 51A 24nC 13.5mOhm LogLvAB

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SeekIC No. : 00147706 Detail

IRLZ44ZPBF: MOSFET MOSFT 55V 51A 24nC 13.5mOhm LogLvAB

floor Price/Ceiling Price

US $ .53~1.21 / Piece | Get Latest Price
Part Number:
IRLZ44ZPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.21
  • $.78
  • $.57
  • $.53
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/6/12

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : 16 V Continuous Drain Current : 51 A
Resistance Drain-Source RDS (on) : 22.5 mOhms Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 16 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 51 A
Resistance Drain-Source RDS (on) : 22.5 mOhms


Features:

Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175 Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
 Lead-Free



Specifications

  Parameter
Maximum
Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited)
51
A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V
36
IDM Pulsed Drain Current 􀀀
204
PD @TC= 25 Power Dissipation
80
W
  Linear Derating Factor
0.53
W/
VGS Gate-to-Source Voltage
± 16
V
EAS (Thermally limited) Single Pulse Avalanche Energy
78
mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value
110
IAR Avalanche Current􀀀
See Fig.12a, 12b, 15, 16
A
EAR Repetitive Avalanche Energy
mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting Torque, 6-32 or M3 screw
10 lbf`in (1.1N`m)



Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRLZ44ZPbF utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of IRLZ44ZPbF are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Parameters:

Technical/Catalog InformationIRLZ44ZPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C51A
Rds On (Max) @ Id, Vgs13.5 mOhm @ 31A, 10V
Input Capacitance (Ciss) @ Vds 1620pF @ 25V
Power - Max80W
PackagingTube
Gate Charge (Qg) @ Vgs36nC @ 5V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRLZ44ZPBF
IRLZ44ZPBF



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