IRLZ44ZLPBF

MOSFET MOSFT 55V 51A 13.5mOhm 24nC LogLvl

product image

IRLZ44ZLPBF Picture
SeekIC No. : 00149066 Detail

IRLZ44ZLPBF: MOSFET MOSFT 55V 51A 13.5mOhm 24nC LogLvl

floor Price/Ceiling Price

US $ .57~1.3 / Piece | Get Latest Price
Part Number:
IRLZ44ZLPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.3
  • $.84
  • $.61
  • $.57
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/6/12

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : 16 V Continuous Drain Current : 51 A
Resistance Drain-Source RDS (on) : 22.5 mOhms Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : 16 V
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-262
Continuous Drain Current : 51 A
Resistance Drain-Source RDS (on) : 22.5 mOhms


Features:

Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175 Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
 Lead-Free



Specifications

  Parameter
Maximum
Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited)
51
A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V
36
IDM Pulsed Drain Current 􀀀
204
PD @TC= 25 Power Dissipation
80
W
  Linear Derating Factor
0.53
W/
VGS Gate-to-Source Voltage
± 16
V
EAS (Thermally limited) Single Pulse Avalanche Energy
78
mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value
110
IAR Avalanche Current􀀀
See Fig.12a, 12b, 15, 16
A
EAR Repetitive Avalanche Energy
mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting Torque, 6-32 or M3 screw
10 lbf`in (1.1N`m)



Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRLZ44ZLPbFutilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of IRLZ44ZLPbF are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Isolators
Industrial Controls, Meters
Transformers
Resistors
Circuit Protection
View more