IRLZ44ZL

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 51A
Power - Max: 80W
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 31A, 10V
Gate Charge (Qg) @ Vgs: 36nC @ 5V
Input Capacitance (Ciss) @ Vds: 1620pF @ 25V
Supplier Device Package: TO-262


Features:

Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V(Silicon Limited)	51	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	36
IDM	Pulsed Drain Current	204
PD @TC = 25°C	Power Dissipation	80	W
	Linear Derating Factor	0.53	W/°C
VGS	Gate-to-Source Voltage	± 16	V
EAS (Thermally limited)	Single Pulse Avalanche Energy	78	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	110
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting Torque, 6-32 or M3 screw	10 lbf* in (1.1N* m)

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRLZ44ZL utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of IRLZ44ZLare a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.