IRLZ44Z

MOSFET N-CH 55V 51A TO-220AB

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IRLZ44Z Picture
SeekIC No. : 003433538 Detail

IRLZ44Z: MOSFET N-CH 55V 51A TO-220AB

floor Price/Ceiling Price

Part Number:
IRLZ44Z
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 51A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 31A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) @ Vgs: 36nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1620pF @ 25V
Power - Max: 80W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220AB    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 51A
Power - Max: 80W
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 31A, 10V
Gate Charge (Qg) @ Vgs: 36nC @ 5V
Input Capacitance (Ciss) @ Vds: 1620pF @ 25V


Features:

Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax



Specifications

Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V(Silicon Limited)
51
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
36
IDM Pulsed Drain Current
204
PD @TC = 25°C Power Dissipation
80
W
Linear Derating Factor
0.53
W/°C
VGS Gate-to-Source Voltage
± 16
V
EAS (Thermally limited) Single Pulse Avalanche Energy
78
mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value
110
IAR Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR Repetitive Avalanche Energy
mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw
10 lbf* in (1.1N* m)
 



Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRLZ44Z utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of IRLZ44Z are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




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