IRLZ44S

MOSFET N-Chan 60V 50 Amp

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IRLZ44S Picture
SeekIC No. : 00165080 Detail

IRLZ44S: MOSFET N-Chan 60V 50 Amp

floor Price/Ceiling Price

Part Number:
IRLZ44S
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.028 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : SMD-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 10 V
Resistance Drain-Source RDS (on) : 0.028 Ohms
Package / Case : SMD-220


Description

Third Generation HEXFETs from International Rectifier IRLZ44S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The SMD-220 is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The features of IRLZ44S can be summarized as (1)surface mount; (2)available in tape & reel; (3)dynamic dv/dt rating; (4)logic-level gate drive; (5)RDS(on)Specilied at VGS=4V & 5V; (6)175°C operating temperature; (7)fast switching.

The absolute maximum ratings of IRLZ44S are (1)ID @ TC = 25°C continuous drain current, VGS @ 5.0: 50* A; (2)ID @ TC = 100°C continuous drain current, VGS as 5.0: 36 A; (3)pulsed drain current IDM: 200 A; (4)PD @ TC = 25°C power dissipation: 150W; (5)PD @ TA = 25°C power dissipation (PCB Mount)**: 3.7W; (6)VGS *gate-to-source voltage: ±10V; (7)EAS single pulse avalanche energy: 400 mJ; (8)dv/dt peak diode recovery dv/dt: 4.5 V/ns; (9)TJ, TSTG junction and storage temperature range: -55 to +175°C; (10)soldering temperature, for 10 seconds 300 (1 .6mm from case).




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