MOSFET MOSFET, 55V, 41A, 22 mOhm, 32 nC Qg, Logic Level, TO-220AB
IRLZ44N: MOSFET MOSFET, 55V, 41A, 22 mOhm, 32 nC Qg, Logic Level, TO-220AB
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Features: SpecificationsDescription The IRLIZ44NPbF is a kind of fifth generation HEXFETs from int...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V |
Gate-Source Breakdown Voltage : | +/- 16 V | Continuous Drain Current : | 47 A |
Resistance Drain-Source RDS (on) : | 22 mOhms | Configuration : | Single |
Package / Case : | TO-220AB |
The fifth generation HEXFETs from international rectifier IRLZ44A utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designerwith an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The lowthermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
The features of IRLZ44N can be summarized as (1)logic-level gate drive; (2)advanced process technology; (3)dynamic dv/dt Rating; (4)175°C operating temperature; (5)fast switching; (6)fully avalanche rated.
The absolute maximum ratings of IRLZ44N are (1)ID @ TC = 25°C continuous drain current, VGS @ 5.0: 47 A; (2)ID @ TC = 100°C continuous drain current, VGS as 5.0: 33 A; (3)pulsed drain current IDM: 160 A; (4)PD @ TC = 25°C power dissipation: 110W; (5)VGS gate-to-source voltage: ±16V; (6)EAR single pulse avalanche energy: 210 mJ; (7)dv/dt peak diode recovery dv/dt: 5.0 V/ns; (8)TJ, TSTG junction and storage temperature range: -55 to +175°C.
Technical/Catalog Information | IRLZ44N |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 47A |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 25A, 10V |
Input Capacitance (Ciss) @ Vds | 1700pF @ 25V |
Power - Max | 3.8W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 48nC @ 5V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Logic Level Gate |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRLZ44N IRLZ44N |