IRLZ44N

MOSFET MOSFET, 55V, 41A, 22 mOhm, 32 nC Qg, Logic Level, TO-220AB

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SeekIC No. : 00159391 Detail

IRLZ44N: MOSFET MOSFET, 55V, 41A, 22 mOhm, 32 nC Qg, Logic Level, TO-220AB

floor Price/Ceiling Price

Part Number:
IRLZ44N
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 47 A
Resistance Drain-Source RDS (on) : 22 mOhms Configuration : Single
Package / Case : TO-220AB    

Description

Maximum Operating Temperature :
Mounting Style :
Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 22 mOhms
Gate-Source Breakdown Voltage : +/- 16 V
Continuous Drain Current : 47 A


Description

The fifth generation HEXFETs from international rectifier IRLZ44A utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designerwith an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The lowthermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

The features of IRLZ44N can be summarized as (1)logic-level gate drive; (2)advanced process technology; (3)dynamic dv/dt Rating; (4)175°C operating temperature; (5)fast switching; (6)fully avalanche rated.
 
The absolute maximum ratings of IRLZ44N are (1)ID @ TC = 25°C continuous drain current, VGS @ 5.0: 47 A; (2)ID @ TC = 100°C continuous drain current, VGS as 5.0: 33 A; (3)pulsed drain current IDM: 160 A; (4)PD @ TC = 25°C power dissipation: 110W; (5)VGS gate-to-source voltage: ±16V; (6)EAR single pulse avalanche energy: 210 mJ; (7)dv/dt peak diode recovery dv/dt: 5.0 V/ns; (8)TJ, TSTG junction and storage temperature range: -55 to +175°C.




Parameters:

Technical/Catalog InformationIRLZ44N
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C47A
Rds On (Max) @ Id, Vgs22 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 1700pF @ 25V
Power - Max3.8W
PackagingBulk
Gate Charge (Qg) @ Vgs48nC @ 5V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRLZ44N
IRLZ44N



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