DescriptionThe IRLZ44A is a kind of advaned power MSFET which BVDSS=60V, RDS(ON)=0.025 and ID=50A. If you want to know more and detail imformation about this IC, please go to our website. The features of IRLZ44A can be summarized as (1)logic-level gate drive; (2)avalanche rugged technology; (3)ru...
IRLZ44A: DescriptionThe IRLZ44A is a kind of advaned power MSFET which BVDSS=60V, RDS(ON)=0.025 and ID=50A. If you want to know more and detail imformation about this IC, please go to our website. The featu...
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Features: SpecificationsDescription The IRLIZ44NPbF is a kind of fifth generation HEXFETs from int...
The IRLZ44A is a kind of advaned power MSFET which BVDSS=60V, RDS(ON)=0.025 and ID=50A. If you want to know more and detail imformation about this IC, please go to our website.
The features of IRLZ44A can be summarized as (1)logic-level gate drive; (2)avalanche rugged technology; (3)rugged gate oxide technology; (4)lower input capacitance; (5)improved gate charge; (6)extended safe operating area; (7)lower leakage current : 10pA(Max.) @VDS=60V; (8)lower RDS(ON) : 0.02.
The absolute maximum ratings of IRLZ44A are (1)VDSS drain-to-source voltage: 60V; (2)continuous drain current (Tc=25°C): 50 A; (3)continuous drain current (TC=100°C): 35A; (4)drain current-pulsed IDM: 175 A; (5)VGS gate-to-source voltage: ±20V; (6)single pulsed avalanche energy: 857 mJ; (7)IAR avalanche current: 50A; (8)repetitive avalanche energy EAR: 12.5 mJ; (9)dv/dt peak diode Recovery: 5.5V/ns; (10)total power dissipation (Tc=25°C):125W /linear derating factor PD: 0.83 W/°C; (11)TJ operating junction and TSTG storage temperature range: -55 to +175°C; (12)TL lead temp. for soldering purposes, 1/8" from case for 5-seconds: 300°C.