IRLZ34NSPBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Gate-Source Breakdown Voltage : 16 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 60 mOhms


Features:






Specifications






Description

      The IRLZ34NSPbF and IRLZ34NLPbF has 8 features.The first one is advanced process technology.The second one is surface mount (IRLZ34NS) .The third one is low-profile through-hole(IIRLZ34NL) .The fourth one is 175  operating temperature.The fifth one is fast switch.The sixth one is fully avalanche rated.The seventh one is lead-free.The eighth one is logic-level gate drive.
       Fifth generation HEXFETs from international rectifier IRLZ34NSPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit,combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know for,provides the designer with an extremely effcient and reliable device for use in a wide variety of applications.The D Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.The D pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.The through-hole version (IRLZ34NL) is available for lowprofile applications.
      The IRLZ34NSPbF and IRLZ34NLPbF has some information about absolute maximum ratings.ID @ Tc =25 ,when parameter is continuous drain current,VGS @ 10V,the max is 30,the units is A.ID @ Tc =100 ,when parameter is continuous drain current,VGS @ 10V,the max is 21,the units is A.IDM,when parameter is pulsed drain current,the max is 110,the units is A.PD @ TA = 25,when parameter is power dissipation,the max is 3.8,the units is W.PD @ TA = 25,when parameter is power dissipation,the max is 68,the units is W.When parameter is linear derating factor,the max is 0.45,the units is W/.
      At present there is not too much information about IRLZ34NSPbF.If you are willing to find more  about the IRLZ34NSPbF and IRLZ34NLPbF, please pay attention to our web! We will promptly update the relevant  information.

Parameters:

Technical/Catalog Information	IRLZ34NSPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	35 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	880pF @ 25V
Power - Max	68W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	25nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLZ34NSPBF IRLZ34NSPBF