IRLZ34NS

MOSFET N-CH 55V 30A D2PAK

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SeekIC No. : 003432845 Detail

IRLZ34NS: MOSFET N-CH 55V 30A D2PAK

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Part Number:
IRLZ34NS
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/11

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 30A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 35 mOhm @ 16A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) @ Vgs: 25nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 880pF @ 25V
Power - Max: 3.8W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 30A
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 25nC @ 5V
Input Capacitance (Ciss) @ Vds: 880pF @ 25V
Power - Max: 3.8W
Rds On (Max) @ Id, Vgs: 35 mOhm @ 16A, 10V


Features:

·Logic-Level Gate Drive
· Advanced Process Technology
· Surface Mount
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated



Specifications

  Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V 27 A
ID @ TA = 100°C Continuous Drain Current, VGS @ -10V 19 A
IDM Pulsed Drain Current 110 A
PD @TA = 25°C Maximum Power Dissipation 56 W
  Linear Derating Factor 0.37 mW/°C
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy 110 mJ
IAR Avalanche Current 16
5.6
A
EAR Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt 10  
TJ , TSTG Junction and Storage Temperature Range -55 to + 175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case) °C



Description

Fifth Generation HEXFETs from International Rectifier IRLZ34NS utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs IRLZ34NS are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D2Pak IRLZ34NS is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRLZ34NS is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.




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