Series: -
Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 2V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 30A
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 3.7W
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262-3
Input Capacitance (Ciss) @ Vds: 1600pF @ 25V
Gate Charge (Qg) @ Vgs: 35nC @ 5V
Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 5V
Specifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
30 |
A |
| ID @ TC = 70°C |
Continuous Drain Current, VGS @ 10V |
21 |
A |
| IDM |
Pulsed Drain Current |
110 |
A |
| PD @TA = 25°C |
Power Dissipation |
3.7 |
W |
| PD @TC = 25°C |
Power Dissipation |
88 |
W |
| |
Linear Derating Factor |
0.59 |
W/°C |
| VGS |
Gate-to-Source Voltage |
±10 |
V |
| EAS |
Single Pulse Avalanche Energy |
220 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
4.5 |
V/ns |
| TJ,TSTG |
Operating Junction
Storage Temperature Range |
-55 to 175 |
|
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
|
DescriptionThird Generation HEXFETs from International Rectifier IRLZ34L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs IRLZ34L are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak IRLZ34L is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRLZ34L provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRLZ34L is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ34L) is available for lowprofile applications.
IRLZ34L Data Sheet
