MOSFET N-Chan 60V 30 Amp
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Features: SpecificationsDescription The IRLIZ44NPbF is a kind of fifth generation HEXFETs from int...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 10 V | Continuous Drain Current : | 30 A | ||
Resistance Drain-Source RDS (on) : | 0.05 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
PARAMETER | SYMBOL | LIMIT | UNIT | ||
Drain-Source Voltage | VDS | 60 | V | ||
Gate-Source Voltage | VGS | ±10 | |||
Continuous Drain Current | VGS at 5 V | TC = 25 | ID | 30 | A |
TC = 100 | 21 | ||||
Pulsed Drain Currenta | IDM | 110 | |||
Linear Derating Factor | 0.59 | W/ | |||
Single Pulse Avalanche Energyb | EAS | 220 | mJ | ||
Maximum Power Dissipation | TC = 25 | PD | 88 | W | |
Peak Diode Recovery dV/dtc | dV/dt | 4.5 | V/ns | ||
Operating Junction and Storage Temperature Range | TJ, Tstg | - 55 to + 175 | |||
Mounting Torque | 6-32 or M3 screw | 10 1.1 |
lbf ` in N ` m | ||
Soldering Recommendations (Peak Temperature) | for 10 s | 300d |
Third generation Power MOSFETs IRLZ34 from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package of IRLZ34 is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.