IRLZ34

MOSFET N-Chan 60V 30 Amp

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IRLZ34 Picture
SeekIC No. : 00158784 Detail

IRLZ34: MOSFET N-Chan 60V 30 Amp

floor Price/Ceiling Price

US $ 1.48~2.26 / Piece | Get Latest Price
Part Number:
IRLZ34
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~445
  • 445~500
  • 500~1000
  • 1000~2000
  • Unit Price
  • $2.26
  • $2.03
  • $1.6
  • $1.48
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.05 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 30 A
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 10 V
Resistance Drain-Source RDS (on) : 0.05 Ohms


Features:

• Dynamic dV/dt Rating
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available


The above info is from (www.seekic.com)


Specifications

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±10
Continuous Drain Current VGS at 5 V TC = 25 ID 30 A
TC = 100 21
Pulsed Drain Currenta IDM 110
Linear Derating Factor   0.59 W/
Single Pulse Avalanche Energyb EAS 220 mJ
Maximum Power Dissipation TC = 25 PD 88 W
Peak Diode Recovery dV/dtc dV/dt 4.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175
Mounting Torque 6-32 or M3 screw   10
1.1
lbf ` in
N ` m
Soldering Recommendations (Peak Temperature) for 10 s   300d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 285 H, RG = 25 , IAS = 30 A (see fig. 12).
c. ISD 30 A, dI/dt 200 A/s, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply


Edited by (www.seekic.com) ,the biggest IC PDF and datasheet download site.


Description

Third generation Power MOSFETs IRLZ34 from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package of IRLZ34 is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.



The above info is from (www.seekic.com)


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