IRLZ24NSPBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Continuous Drain Current : 18 A
Gate-Source Breakdown Voltage : 16 V
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 105 mOhms


Features:






Specifications






Description

      IRLZ24NSPbF is one kind of HEXFET power MOSFET,the fifth generation HEXFETs from international rectifiter utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit,combined with the fast swithing speed and ruggedized device design that HEXFET power MOSFETs are well know for,provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
      IRLZ24NSPbF has six features:(1)advanced process technology;(2)isolated package;(3)high voltage isolation=2.5KVRMS;(4)sink to lead creepage dist=4.8mm;(5)fully avalanche rated;(6)lead-free.
      Absolute maximum ratings of IRLZ24NSPbF can be summerized as:(1)continuous drain current:31A(ID@Tc=100);(2)pilsed drain current:160A;(3)power dissipation:45W;(4)linear derating factor:0.3W/;(5)gate-to-source voltage:+-20V;(6)single pulse avalanche energy:210mJ;(7)avalanche current:25A;(8)repetitive avalanche energy:4.5mJ;(9)operating junction and storage temperature range:-55 to +175.

Parameters:

Technical/Catalog Information	IRLZ24NSPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	18A
Rds On (Max) @ Id, Vgs	60 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	480pF @ 25V
Power - Max	45W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	15nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLZ24NSPBF IRLZ24NSPBF