MOSFET N-CH 55V 18A D2PAK
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Features: SpecificationsDescription The IRLIZ44NPbF is a kind of fifth generation HEXFETs from int...
Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 55V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 18A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 11A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 2V @ 250µA | Gate Charge (Qg) @ Vgs: | 15nC @ 5V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 480pF @ 25V | ||
Power - Max: | 3.8W | Mounting Type: | Surface Mount | ||
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Supplier Device Package: | D2PAK |
Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 18 | A |
ID @ TC = 70°C | Continuous Drain Current, VGS @ 10V | 13 | A |
IDM | Pulsed Drain Current | 72 | A |
PD @TC = 25°C | Power Dissipation | 45 | W |
Linear Derating Factor | 0.30 | W/°C | |
VGS | Gate-to-Source Voltage | ±16 | V |
EAS | Single Pulse Avalanche Energy | 68 | mJ |
IAR | Avalanche Current | 11 | A |
EAR | Repetitive Avalanche Energy | 4.5 | mJ |
dv/dt | Peak Diode Recovery dv/dt |
4.6 |
V/ns |
TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
Mounting torque, 6-32 or M3 screw. | 10 lbf•in (1.1N•m) |
Fifth Generation HEXFETs from International Rectifier IRLZ24NS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs IRLZ24NS are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak IRLZ24NS is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRLZ24NS provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRLZ24NS is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ24NL) is available for lowprofile applications.