IRLZ24NLPBF

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 18A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) @ Vds: 480pF @ 25V
Drain to Source Voltage (Vdss): 55V
Gate Charge (Qg) @ Vgs: 15nC @ 5V
Manufacturer: International Rectifier
Power - Max: 3.8W
Rds On (Max) @ Id, Vgs: 60 mOhm @ 11A, 10V
Supplier Device Package: TO-262


Parameters:

Technical/Catalog Information	IRLZ24NLPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	18A
Rds On (Max) @ Id, Vgs	60 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	480pF @ 25V
Power - Max	3.8W
Packaging	Tube
Gate Charge (Qg) @ Vgs	15nC @ 5V
Package / Case	TO-262-3 (Straight Leads)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLZ24NLPBF IRLZ24NLPBF