Features: Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175°C Operating Temperature Lower Leakage Current: 10mA (Max.) @ VDS = 100VLower RDS(ON): 0. 101W (Typ.)Specifications Symbol Characteristic Valu...
IRLW530A: Features: Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175°C Operating Temperature Lower Leakage Current: 10mA ...
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Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance` Im...
Symbol |
Characteristic |
Value |
Units |
VDSS |
Drain-to-Source Voltage |
100 |
V |
ID |
Continuous Drain Current (TC=25°C) |
14 |
A |
Continuous Drain Current (TC=100°C) |
9.9 | ||
IDM |
Drain Current-Pulsed (1) |
49 |
A |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulsed Avalanche Energy (2) |
261 |
mJ |
IAR |
Avalanche Current (1) |
14 |
A |
EAR |
Repetitive Avalanche Energy (1) |
6.2 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt (2) |
6.5 |
V/ns |
PD |
Total Power Dissipation (TA=25°C) |
3.8 |
W |
Total Power Dissipation (TC=25°C) Linear Derating Factor |
62 0.41 |
W W/°C | |
TJ , TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +175 |
°C |
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds |
300 |