MOSFET P-CH 55V 20A I-PAK
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Symbol | Parameter | Max. | Units |
VDS | Drain-to-Source Voltage | -55 | V |
VGS | Gate-to-Source Voltage | ± 20 | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | -20 | A |
ID @ TC =100°C | Continuous Drain Current, VGS @ 10V | -14 | A |
IDM | Pulsed Drain Current | -60 | A |
PD @ TC = 25 | Maximum Power Dissipation | 79 | W |
PD @ TC =100°C | Maximum Power Dissipation | 39 | W |
Linear Derating Factor |
0.53 |
W | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
Clamping Pressure | - | N |
This Digital Audio HEXFET® IRLU9343PbF is specifically designed for Class-D audio amplifier applications. This MosFET IRLU9343PbF utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET IRLU9343PbF are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Technical/Catalog Information | IRLU9343PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 20A |
Rds On (Max) @ Id, Vgs | 105 mOhm @ 3.4A, 10V |
Input Capacitance (Ciss) @ Vds | 660pF @ 50V |
Power - Max | 79W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 47nC @ 10V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRLU9343PBF IRLU9343PBF |