IRLU014N

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 10A
Packaging: Tube
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Power - Max: 28W
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Rds On (Max) @ Id, Vgs: 140 mOhm @ 6A, 10V
Gate Charge (Qg) @ Vgs: 7.9nC @ 5V
Input Capacitance (Ciss) @ Vds: 265pF @ 25V


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	10	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	7.1
IDM	Pulsed Drain Current	40
PD @TC = 25°C	C Power Dissipation	28	W
	Linear Derating Factor	0.2	W/°C
VGS	Gate-to-Source Voltage	±16	V
EAS	Single Pulse Avalanche Energy	35	mJ
IAR	Avalanche Current	6.0	A
EAR	Repetitive Avalanche Energy	2.8	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Fifth Generation HEXFETs from International Rectifier IRLU014N utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs IRLU014N are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK IRLU014N is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.