Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 20A
Gate Charge (Qg) @ Vgs: 47nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Power - Max: 79W
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
Input Capacitance (Ciss) @ Vds: 660pF @ 50V
Features: Advanced Process Technology
Key Parameters Optimized for Class-D Audio Amplifier Applications
Low RDSON for Improved Efficiency
Low Qg and Qsw for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
175°C Operating Junction Temperature for Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
Multiple Package OptionsSpecifications
|
Parameter |
Max |
Units |
| VDS |
Drain-to-Source Voltage |
55 |
V |
| VGS |
Gate-to-Source Voltage |
±20 |
|
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
-20 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
-14 |
|
| IDM |
Pulsed Drain Current |
-60 |
|
| PD @TC = 25°C |
Power Dissipation |
79 |
W |
| PD @TC = 100°C |
Power Dissipation |
39 |
|
|
Linear Derating Factor |
0.53 |
W/°C |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-40 to + 175 |
°C |
|
Clamping Pressure |
|
N |
DescriptionThis Digital Audio HEXFET® IRLU9343 is specifically designed for Class-D audio amplifier applications. This MosFET IRLU9343 utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET IRLU9343 are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
IRLU9343 Data Sheet
