Features: · Advanced Process Technology·Key Parameters Optimized for Class-D Audio Amplifier Applications· Low RDSON for Improved Efficiency· Low Qg and Qsw for Better THD and Improved Efficiency· Low Qrr for Better THD and Lower EMI· 175°C Operating Junction Temperature for Ruggedness· Repetitive...
IRLU9343-701PbF: Features: · Advanced Process Technology·Key Parameters Optimized for Class-D Audio Amplifier Applications· Low RDSON for Improved Efficiency· Low Qg and Qsw for Better THD and Improved Efficiency· L...
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Symbol | Parameter | Max. | Units |
VDS | Drain-to-Source Voltage | -55 | V |
VGS | Gate-to-Source Voltage | ± 20 | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | -20 | A |
ID @ TC =100°C | Continuous Drain Current, VGS @ 10V | -14 | A |
IDM | Pulsed Drain Current | -60 | A |
PD @ TC = 25 | Maximum Power Dissipation | 79 | W |
PD @ TC =100°C | Maximum Power Dissipation | 39 | W |
Linear Derating Factor |
0.53 |
W | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
Clamping Pressure | - | N |
This Digital Audio HEXFET® IRLU9343-701PbF is specifically designed for Class-D audio amplifier applications. This MosFET IRLU9343-701PbF utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET IRLU9343-701PbF are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.