Features: Advanced Process TechnologyKey Parameters Optimized for Class-D Audio Amplifier Applications Low RDSON for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI 175°C Operating Junction Temperature for Ruggedness Repetitive Avalan...
IRLU9343-701: Features: Advanced Process TechnologyKey Parameters Optimized for Class-D Audio Amplifier Applications Low RDSON for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qr...
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Parameter |
Max |
Units | |
VDS | Drain-to-Source Voltage |
55 |
V |
VGS | Gate-to-Source Voltage |
±20 |
|
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
-20 |
A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
-14 |
|
IDM | Pulsed Drain Current |
-60 |
|
PD @TC = 25°C | Power Dissipation |
79 |
W |
PD @TC = 100°C | Power Dissipation |
39 |
|
Linear Derating Factor |
0.53 |
W/°C | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-40 to + 175 |
°C |
Clamping Pressure |
N |
This Digital Audio HEXFET® IRLU9343-701is specifically designed for Class-D audio amplifier applications. This MosFET IRLU9343-701 utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET IRLU9343-701 are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.