IRLU7833

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 50nC @ 4.5V
Packaging: Tube
Mounting Type: Through Hole
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V
Manufacturer: International Rectifier
Power - Max: 140W
Current - Continuous Drain (Id) @ 25° C: 140A
Input Capacitance (Ciss) @ Vds: 4010pF @ 15V
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak


Features:

· Very Low R_DS(on) at 4.5V V_GS
· Ultra-Low Gate Impedance
· Fully Characterized Avalanche Voltage and Current




Application

· High Frequency Synchronous Buck Converters for Computer Processor Power
· High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use

Pinout






Specifications

	Parameter		Units
ID @ VGS = 12V, TC = 25°C	Continuous Drain Current	89	A
ID @ VGS = 12V, TC = 100°C	Continuous Drain Current	63	A
IDM	Pulsed Drain Current	42	A
PD @ TC = 25°C	Max. Power Dissipation	360	W
	Linear Derating Factor	130	W/°C
VGS	Gate-to-Source Voltage	±16	V
EAS	Single Pulse Avalanche Energy	110	mJ
IAR	Avalanche Current	190	A
EAR	Repetitive Avalanche Energy	0.5	mJ
dv/dt	Peak Diode Recovery dv/dt	3.5	V/ns
TJ	Operating Junction	-55 to 175	oC
TSTG	Storage Temperature Range	See Fig.12a, 12b, 15, 16	oC
	Pckg. Mounting Surface Temp.	300(1.6mm from case )	oC
	Weight	0.98 (Typical)	g

Description

The IRLU7833 is a HEXFET power MOSFET.It can be used as high frequency synchronous buck converters for computer processor power and high frequency isolated DC-DC converters with synchronous rectification for Telecom.It also plays a role in industrial use.It is available in I-Pak package.

There are some features about IRLU7833.(1)very low RDS(on) at 4.5 V;(2)ultra-low gate impedance;(3)fully characterized avalanche voltage and current.

What comes next is the absolute maximum ratings of IRLU7833.(1):drain-to-source voltage(VDS) is 30 V;(2):gate-to-source voltage(VGS) is ±20 V;(3):operating junction(TJ) is from -55 to 175;(4):storage temperature range(TSTG) is from -55 to 175;(5):soldering temperature for 10 seconds is 300.(6):pulsed drain current(IDM) is 560 A;(7):linear derating factor is0.95 W/.(8):the minimum of drain-to-source breakdown voltage is 30 V at VGS = 0V,ID = 250A;(9):the minimum for the gate threshold voltage is 1.4 V and the maximum is 2.3 V at VDS = VGS,ID = 250A;(10):the maximum gate-to-source forward leakage is 100 nA at VGS = 20V.

Parameters:

Technical/Catalog Information	IRLU7833
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	140A
Rds On (Max) @ Id, Vgs	4.5 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	4010pF @ 15V
Power - Max	140W
Packaging	Tube
Gate Charge (Qg) @ Vgs	50nC @ 4.5V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRLU7833 IRLU7833