IRLU4343PBF

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 42nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 26A
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Power - Max: 79W
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
Input Capacitance (Ciss) @ Vds: 740pF @ 50V


Features:

` Advanced Process Technology
`Key Parameters Optimized for Class-D Audio Amplifier Applications
` Low R<sub>DSON</sub> for Improved Efficiency
` Low Q_g and Q_sw for Better THD and Improved Efficiency
` Low Q<sub>rr</sub> for Better THD and Lower EMI
` 175 Operating Junction Temperature for Ruggedness
` Repetitive Avalanche Capability for Robustness and Reliability
` Multiple Package Options
` Lead-Free


Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	55	V
VGS	Gate-to-Source Voltage	±20
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	26	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	19
IDM	Pulsed Drain Current	80
PD @TC = 25	Power Dissipation	79	W
PD @TC = 100	Power Dissipation	39
	Linear Derating Factor	0.53	W/
TJ TSTG	Operating Junction and Storage Temperature Range	-40 to + 175
	Clamping Pressure		N

Repetitive rating; pulse width limited by max. junction temperature.
Contact factory for mounting information


Description

This Digital Audio HEXFET^{® IRLU4343PbF} is specifically designed for Class-D audio amplifier applications. This MosFET IRLU4343PbF utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET IRLU4343PbF are 175 operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.