Position: Home  > All Categories> Integrated Circuits (ICs) > IRLU4343-701PbF

IRLU4343-701PbF

Features: ` Advanced Process Technology`Key Parameters Optimized for Class-D Audio Amplifier Applications` Low RDSON for Improved Efficiency` Low Qg and Qsw for Better THD and Improved Efficiency` Low Qrr for Better THD and Lower EMI` 175 Operating Junction Temperature for Ruggedness` Repetitive A...

product image

IRLU4343-701PbF Picture
See larger image
SeekIC No. : 004378517 Detail

IRLU4343-701PbF: Features: ` Advanced Process Technology`Key Parameters Optimized for Class-D Audio Amplifier Applications` Low RDSON for Improved Efficiency` Low Qg and Qsw for Better THD and Improved Efficiency` L...

IRLU4343-701PbF Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRLU4343-701PbF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

` Advanced Process Technology
`Key Parameters Optimized for Class-D Audio Amplifier Applications
` Low RDSON for Improved Efficiency
` Low Qg and Qsw for Better THD and Improved Efficiency
` Low Qrr for Better THD and Lower EMI
` 175 Operating Junction Temperature for Ruggedness
` Repetitive Avalanche Capability for Robustness and Reliability
` Multiple Package Options
` Lead-Free


Specifications

  Parameter Max. Units
VDS Drain-to-Source Voltage 55 V
VGS Gate-to-Source Voltage ±20
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 26 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 19
IDM Pulsed Drain Current 80
PD @TC = 25 Power Dissipation 79 W
PD @TC = 100 Power Dissipation 39
  Linear Derating Factor 0.53 W/
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -40 to + 175
  Clamping Pressure N

Repetitive rating; pulse width limited by max. junction temperature.
Contact factory for mounting information


Description

This Digital Audio HEXFET® IRLU4343-701PbF is specifically designed for Class-D audio amplifier applications. This MosFET IRLU4343-701PbF utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET IRLU4343-701PbF are 175 operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Undefined Category
VI-B63-IU
X27 589
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
LED Products
LM24P20
KCG057QV1DB-G770
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Cable Assemblies
CS1W-CN114
XW2Z-500T
View more