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IRLU110ATU

MOSFET 100V N-Channel a-FET Logic Level

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IRLU110ATU: MOSFET 100V N-Channel a-FET Logic Level

IRLU110ATU Data Sheet

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Part Number:
IRLU110ATU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.7 A
Resistance Drain-Source RDS (on) : 0.44 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : IPAK
Continuous Drain Current : 4.7 A
Resistance Drain-Source RDS (on) : 0.44 Ohms


Parameters:

Technical/Catalog InformationIRLU110ATU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C4.7A
Rds On (Max) @ Id, Vgs440 mOhm @ 2.35A, 5V
Input Capacitance (Ciss) @ Vds 235pF @ 25V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs8nC @ 5V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRLU110ATU
IRLU110ATU



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