MOSFET N-CH 55V 16A I-PAK
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Parameter |
Max. |
Units | |
ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) |
16 |
A |
ID @ TA = 100°C | Continuous Drain Current, VGS @ 10V |
11 | |
IDM | Pulsed Drain Current |
64 | |
PD @TA = 25°C | Power Dissipation (PCB Mount) |
35 |
|
PD @TA = 25°C | Power Dissipation (PCB Mount) |
0.23 |
W |
Linear Derating Factor |
0.02 |
mW/ | |
VGS | Gate-to-Source Voltage |
± 16 |
V |
EAS(Thermally limited) | Single Pulse Avalanche Energy |
21 |
mJ |
EAS (Tested ) | Single Pulse Avalanche Energy Tested Value |
38 | |
IAR | Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
EAR | Repetitive Avalanche Energy |
mJ | |
TJ, TSTG | Operating Junction and Storage Temperature Range |
-55 to + 150 |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRLU024Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of IRLU024Z are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Technical/Catalog Information | IRLU024Z |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 16A |
Rds On (Max) @ Id, Vgs | 58 mOhm @ 9.6A, 10V |
Input Capacitance (Ciss) @ Vds | 380pF @ 25V |
Power - Max | 35W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 9.9nC @ 5V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRLU024Z IRLU024Z |