IRLU024N

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 17A
Input Capacitance (Ciss) @ Vds: 480pF @ 25V
Drain to Source Voltage (Vdss): 55V
Gate Charge (Qg) @ Vgs: 15nC @ 5V
Power - Max: 45W
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 65 mOhm @ 10A, 10V
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	17	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	12
IDM	Pulsed Drain Current	72
PD @TC = 25°C	Power Dissipation	45	W
	Linear Derating Factor	0.3	W/°C
VGS	Gate-to-Source Voltage	±16	V
EAS	Single Pulse Avalanche Energy	68	mJ
IAR	Avalanche Current	11	A
EAR	Repetitive Avalanche Energy	4.5	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier IRLU024N utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs IRLU024N are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK IRLU024N is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.