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IRLMS6802

Specifications Parameter Max. Units VDS Drain- Source Voltage -20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V4.5V -5.6 A ID @ TA = 100°C Continuous Drain Current, VGS @ 10V4.5V -4.5 IDM Pulsed Drain Current -45 PD @TA = 25°C Power Dissipation 2....

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IRLMS6802: Specifications Parameter Max. Units VDS Drain- Source Voltage -20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V4.5V -5.6 A ID @ TA = 100°C Continuous Drain Current,...

IRLMS6802 Data Sheet

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Part Number:
IRLMS6802
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/11

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Product Details

Description



Specifications

Parameter Max. Units
VDS Drain- Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V4.5V -5.6 A
ID @ TA = 100°C Continuous Drain Current, VGS @ 10V4.5V -4.5
IDM Pulsed Drain Current -45
PD @TA = 25°C Power Dissipation 2.0 W
PD @TA = 25°C Power Dissipation 1.3
Linear Derating Factor 0.016 W/°C
EAS Single Pulse Avalanche Energy 31 mJ
VGS Gate-to-Source Voltage ±12 V
TJ TSTG Junction and Storage Temperature Range -55 to + 150 °C





Description

These P-Channel MOSFETs from International Rectifier IRLMS6802 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device IRLMS6802 for use in battery and load management applications.

The Micro6 package with its customized leadframeproduces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. The unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.






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