Features: Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input CapacitanceImproved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100VLower RDS(ON) : 0.176 (Typ.)Specifications Symbol Characteristic Value Units VDSS Drain-...
IRLM120A: Features: Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input CapacitanceImproved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100VLower RDS...
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Symbol |
Characteristic |
Value |
Units |
VDSS |
Drain-to-Source Voltage |
100 |
V |
ID |
Continuous Drain Current (TC=25°C) |
2.3 |
A |
Continuous Drain Current (TC=100°C) |
1.85 | ||
IDM |
Drain Current-Pulsed (1) |
18 |
A |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulsed Avalanche Energy (2) |
105 |
mJ |
IAR |
Avalanche Current (1) |
2.3 |
A |
EAR |
Repetitive Avalanche Energy (1) |
0.27 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt (2) |
6.5 |
V/ns |
PD |
Total Power Dissipation (TC=25°C)* Linear Derating Factor |
2.7 0.022 |
W W/°C |
TJ , TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
°C |
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds |
300 |