IRLMS6702TR

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 1.7W
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 2.4A
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.6A, 4.5V
Manufacturer: International Rectifier
Package / Case: 6-LSOP (0.063", 1.60mm Width)
Supplier Device Package: Micro6?(TSOP-6)
Gate Charge (Qg) @ Vgs: 8.8nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 210pF @ 15V


Parameters:

Technical/Catalog Information	IRLMS6702TR
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	2.3A
Rds On (Max) @ Id, Vgs	200 mOhm @ 1.6A, 4.5V
Input Capacitance (Ciss) @ Vds	210pF @ 15V
Power - Max	1.7W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	8.8nC @ 4.5V
Package / Case	Micro6?(TSOP-6)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRLMS6702TR IRLMS6702TR