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IRLMS6702

Specifications Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V4.5V -2.4 A ID @ TA = 100°C Continuous Drain Current, VGS @ 10V4.5V -1.9 IDM Pulsed Drain Current -13 PD @TA = 25°C Power Dissipation 1.7 W Linear Derating Factor 13 ...

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IRLMS6702: Specifications Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V4.5V -2.4 A ID @ TA = 100°C Continuous Drain Current, VGS @ 10V4.5V -1.9 IDM Pulse...

IRLMS6702 Data Sheet

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Part Number:
IRLMS6702
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Description



Specifications

Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V4.5V -2.4 A
ID @ TA = 100°C Continuous Drain Current, VGS @ 10V4.5V -1.9
IDM Pulsed Drain Current -13
PD @TA = 25°C Power Dissipation 1.7 W
Linear Derating Factor 13 W/°C
VGS Gate-to-Source Voltage ±20 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ TSTG Junction and Storage Temperature Range -55 to + 150 °C





Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier IRLMS6702 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRLMS6702, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The Micro6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board spaceis at a premium. The IRLMS6702's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.






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