IRLMS5703

Specifications Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -2.3 A ID @ TA = 100°C Continuous Drain Current, VGS @ 10V -1.9 IDM Pulsed Drain Current -13 PD @TA = 25°C Power Dissipation 1.7 W Linear Derating Factor 13 W/°C VGS ...

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SeekIC No. : 004378433 Detail

IRLMS5703: Specifications Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -2.3 A ID @ TA = 100°C Continuous Drain Current, VGS @ 10V -1.9 IDM Pulsed Drain Curr...

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Part Number:
IRLMS5703
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Specifications

Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -2.3 A
ID @ TA = 100°C Continuous Drain Current, VGS @ 10V -1.9
IDM Pulsed Drain Current -13
PD @TA = 25°C Power Dissipation 1.7 W
Linear Derating Factor 13 W/°C
VGS Gate-to-Source Voltage ±20 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ TSTG Junction and Storage Temperature Range -55 to + 150 °C





Description

Fifth Generation HEXFETs from International Rectifier IRLMS5703 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs IRLMS5703 are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The Micro6 package of IRLMS5703 with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.






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