Specifications Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -2.3 A ID @ TA = 100°C Continuous Drain Current, VGS @ 10V -1.9 IDM Pulsed Drain Current -13 PD @TA = 25°C Power Dissipation 1.7 W Linear Derating Factor 13 W/°C VGS ...
IRLMS5703: Specifications Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -2.3 A ID @ TA = 100°C Continuous Drain Current, VGS @ 10V -1.9 IDM Pulsed Drain Curr...
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Parameter | Max. | Units | |
ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V | -2.3 | A |
ID @ TA = 100°C | Continuous Drain Current, VGS @ 10V | -1.9 | |
IDM | Pulsed Drain Current | -13 | |
PD @TA = 25°C | Power Dissipation | 1.7 | W |
Linear Derating Factor | 13 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
TJ TSTG | Junction and Storage Temperature Range | -55 to + 150 | °C |
Fifth Generation HEXFETs from International Rectifier IRLMS5703 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs IRLMS5703 are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The Micro6 package of IRLMS5703 with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.