Position: Home  > All Categories> Integrated Circuits (ICs) > IRLMS4502

IRLMS4502

Features: ·Ultra Low On-Resistance·P-Channel MOSFET·urface Mount·Available in Tape & ReelSpecifications Parameter Max. Units VDS Drain- Source Voltage -12 V ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -5.5 A ID @ TA= 70°C Continuous...

product image

IRLMS4502 Picture
See larger image
SeekIC No. : 004378432 Detail

IRLMS4502: Features: ·Ultra Low On-Resistance·P-Channel MOSFET·urface Mount·Available in Tape & ReelSpecifications Parameter Max. Units VDS Drain- Source Voltage -12 V I...

IRLMS4502 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRLMS4502
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/6/11

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Ultra Low On-Resistance
·P-Channel MOSFET
·urface Mount
·Available in Tape & Reel


Specifications
Parameter
Max.
Units

VDS

Drain- Source Voltage

-12
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -4.5V
-5.5

A

ID @ TA= 70°C
Continuous Drain Current, VGS @ -4.5V
-4.4
IDM
Pulsed Drain Current
-44
PD @TA = 25°C
Power Dissipation
1.7
W
PD @TA = 70°C
Power Dissipation
1.1
Linear Derating Factor
0.013
W/°C
EAS
Single Pulse Avalanche Energy
28
mJ
VGS
Gate-to-Source Voltage
± 12
V
TJ, TSTG
Junction and Storage Temperature Range
55 to + 150
°C



Description

These P-Channel MOSFETs from International Rectifier IRLMS4502 utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..

The Micro6 package with its customized leadframe produces a HEXFET power MOSFET IRLMS4502 with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Undefined Category
VI-B63-IU
X27 589
Circuit Protection
A50QS75-4Y
F-17*77
Cable Assemblies
CS1W-CN114
XW2Z-500T
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Line Protection, Backups
BX0023
A20B-1008-0550
View more