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IRLMS4502

Features: ·Ultra Low On-Resistance·P-Channel MOSFET·urface Mount·Available in Tape & ReelSpecifications Parameter Max. Units VDS Drain- Source Voltage -12 V ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -5.5 A ID @ TA= 70°C Continuous...

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IRLMS4502: Features: ·Ultra Low On-Resistance·P-Channel MOSFET·urface Mount·Available in Tape & ReelSpecifications Parameter Max. Units VDS Drain- Source Voltage -12 V I...

IRLMS4502 Data Sheet

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Part Number:
IRLMS4502
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Ultra Low On-Resistance
·P-Channel MOSFET
·urface Mount
·Available in Tape & Reel


Specifications
Parameter
Max.
Units

VDS

Drain- Source Voltage

-12
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -4.5V
-5.5

A

ID @ TA= 70°C
Continuous Drain Current, VGS @ -4.5V
-4.4
IDM
Pulsed Drain Current
-44
PD @TA = 25°C
Power Dissipation
1.7
W
PD @TA = 70°C
Power Dissipation
1.1
Linear Derating Factor
0.013
W/°C
EAS
Single Pulse Avalanche Energy
28
mJ
VGS
Gate-to-Source Voltage
± 12
V
TJ, TSTG
Junction and Storage Temperature Range
55 to + 150
°C



Description

These P-Channel MOSFETs from International Rectifier IRLMS4502 utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..

The Micro6 package with its customized leadframe produces a HEXFET power MOSFET IRLMS4502 with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.




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